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Same-day dispatch from stock
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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- HIGH ELECTRON MOBILITY
- Drain To Source Voltage Vdss
- 4.5V
- Contact Plating
- Tin
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 8
- Terminal Pozisyonu
- DUAL
- Max Power Dissipation
- 3.5W
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate To Source Voltage Vgs
- 800mV
- Polaritychannel Type
- N-CHANNEL
- Drain Currentmax Abs Id
- 1A
- Reach Svhc
- Unknown
- Kurşunsuz
- Lead Free
- Continuous Drain Current Id
- 1A
- Frekans
- 2GHz
- Min. Çalışma Sıcaklığı
- -65°C
- Nominal Supply Current
- 280mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Jedec95 Code
- MO-229
- Transistor Type
- E-pHEMT
- JESD-609 Kodu
- e3
- Power Output
- 29dBm
- Ambalaj
- Bulk
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 6 Weeks
- Maks. Çalışma Sıcaklığı
- 150°C
- Kılıf / Paket
- 8-WFDFN Exposed Pad
- Parça Durumu
- Obsolete
- Yayın Yılı
- 2014
- Montaj
- Surface Mount
- Noise Figure
- 1dB
- Configuration
- SINGLE
- Pin Sayısı
- 8
- Case Connection
- SOURCE
- Voltage Rated Dc
- 4.5V
- Transistor Application
- AMPLIFIER
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Power Dissipation
- 3.5W
- RoHS Durumu
- RoHS Compliant
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