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Specifications
- Fet Technology
- HIGH ELECTRON MOBILITY
- Drain To Source Voltage Vdss
- 2V
- Uzunluk
- 2.25mm
- Contact Plating
- Tin
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 4
- Terminal Pozisyonu
- DUAL
- Max Power Dissipation
- 300mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate To Source Voltage Vgs
- -5V
- Polaritychannel Type
- N-CHANNEL
- Kurşunsuz
- Lead Free
- Continuous Drain Current Id
- 80mA
- Temel Parça No
- ATF-35143
- Frekans
- 2GHz
- Min. Çalışma Sıcaklığı
- -65°C
- Nominal Supply Current
- 15mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Transistor Type
- pHEMT FET
- Power Output
- 10dBm
- Ambalaj
- Strip
- Number Of Elements
- 1
- Maks. Çalışma Sıcaklığı
- 160°C
- Fabrika Tedarik Süresi
- 6 Weeks
- Parça Durumu
- Obsolete
- Kılıf / Paket
- SC-82A, SOT-343
- Terminal Formu
- GULL WING
- Yayın Yılı
- 2012
- Genişlik
- 1.35mm
- Montaj
- Surface Mount
- Yükseklik
- 1mm
- Noise Figure
- 0.4dB
- Configuration
- SINGLE
- Pin Sayısı
- 4
- Case Connection
- SOURCE
- Voltage Rated Dc
- 5.5V
- Transistor Application
- AMPLIFIER
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
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