Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Yüzey Montaj
- YES
- Noise Figure Db Typ F
- 2dB ~ 3.5dB @ 2GHz ~ 4GHz
- HTS Kodu
- 8541.21.00.95
- Polaritychannel Type
- NPN
- JESD-609 Kodu
- e3
- Terminal Pozisyonu
- RADIAL
- Jesd30 Code
- O-PRDB-F4
- Highest Frequency Band
- C B
- Ambalaj
- Bulk
- Frequency Transition
- 8GHz
- Montaj Tipi
- Surface Mount
- Yayın Yılı
- 2008
- Transistor Type
- NPN
- Terminal Kaplaması
- Matte Tin (Sn)
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Formu
- FLAT
- Voltage Collector Emitter Breakdown Max
- 12V
- Additional Feature
- HIGH RELIABILITY, LOW NOISE
- Qualification Status
- Not Qualified
- Kılıf / Paket
- 4-SMD (85 Plastic)
- RoHS Durumu
- RoHS Compliant
- Power Max
- 500mW
- Configuration
- SINGLE
- ECCN Kodu
- EAR99
- Transistor Application
- AMPLIFIER
- Number Of Elements
- 1
- Power Dissipationmax Abs
- 0.5W
- Currentcollector Ic Max
- 80mA
- Transition Frequency
- 8000MHz
- REACH Uyumluluk Kodu
- unknown
- Terminal Sayısı
- 4
- Tepe Reflow Sıcaklığı (°C)
- 260
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 35mA 8V
- Gain
- 9.5dB ~ 13.5dB
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Obsolete
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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