Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Formu
- FLAT
- Terminal Kaplaması
- Matte Tin (Sn)
- Yayın Yılı
- 2008
- Transistor Type
- NPN
- Montaj Tipi
- Surface Mount
- Qualification Status
- Not Qualified
- Additional Feature
- HIGH RELIABILITY
- Voltage Collector Emitter Breakdown Max
- 12V
- HTS Kodu
- 8541.21.00.75
- Polaritychannel Type
- NPN
- Noise Figure Db Typ F
- 1.3dB ~ 3dB @ 1GHz ~ 4GHz
- Transistor Element Material
- SILICON
- Yüzey Montaj
- YES
- Frequency Transition
- 8GHz
- Highest Frequency Band
- S B
- Jesd30 Code
- O-MRDB-F4
- Ambalaj
- Bulk
- JESD-609 Kodu
- e3
- Terminal Pozisyonu
- RADIAL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain
- 10dB ~ 18dB
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 10mA 8V
- Terminal Sayısı
- 4
- REACH Uyumluluk Kodu
- compliant
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Obsolete
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- ECCN Kodu
- EAR99
- Configuration
- SINGLE
- Power Max
- 500mW
- Kılıf / Paket
- 4-SMD (35 micro-X)
- RoHS Durumu
- RoHS Compliant
- Currentcollector Ic Max
- 60mA
- Transistor Application
- AMPLIFIER
- Number Of Elements
- 1
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