Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN
- Yayın Yılı
- 2009
- Collectoremitter Breakdown Voltage
- 12V
- Montaj Tipi
- Surface Mount
- Collector Emitter Voltage Vceo
- 12V
- Çalışma Sıcaklığı
- 200°C TJ
- Radyasyon Dayanımı
- No
- Noise Figure Db Typ F
- 1.4dB ~ 3dB @ 1GHz ~ 4GHz
- Transistor Element Material
- SILICON
- Polaritychannel Type
- NPN
- Terminal Pozisyonu
- UPPER
- Ambalaj
- Tray
- Montaj
- Surface Mount
- Terminal Sayısı
- 2
- Max Power Dissipation
- 500mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain
- 8dB ~ 17dB
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 10mA 8V
- Max Collector Current
- 60mA
- Collector Base Voltage Vcbo
- 20V
- Pin Sayısı
- 2
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
- Gain Bandwidth Product
- 8 GHz
- RoHS Durumu
- RoHS Compliant
- Kılıf / Paket
- Die
- Continuous Collector Current
- 60mA
- Configuration
- SINGLE
- Emitter Base Voltage Vebo
- 1.5V
- ECCN Kodu
- EAR99
- Number Of Elements
- 1
- Transistor Application
- AMPLIFIER
- Frekans
- 8GHz
- Power Dissipation
- 500mW
- Transition Frequency
- 8000MHz
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