Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 100mW
- Terminal Sayısı
- 4
- Tepe Reflow Sıcaklığı (°C)
- 260
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 1mA 2.7V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain
- 14dB ~ 16dB
- Max Collector Current
- 8mA
- Kurşunsuz
- Lead Free
- Parça Durumu
- Obsolete
- Contact Plating
- Gold
- Pin Sayısı
- 4
- Collector Base Voltage Vcbo
- 11V
- Akım Değeri
- 8mA
- Kılıf / Paket
- TO-253-4, TO-253AA
- RoHS Durumu
- RoHS Compliant
- Case Connection
- COLLECTOR
- Gain Bandwidth Product
- 10 GHz
- Emitter Base Voltage Vebo
- 1.5V
- ECCN Kodu
- EAR99
- Configuration
- SINGLE
- Continuous Collector Current
- 8mA
- Frekans
- 10GHz
- Transistor Application
- SWITCHING
- Number Of Elements
- 1
- Voltage Rated Dc
- 5.5V
- Power Dissipation
- 100mW
- Montaj Tipi
- Surface Mount
- Collectoremitter Breakdown Voltage
- 5.5V
- Yayın Yılı
- 2005
- Transistor Type
- NPN
- Terminal Kaplaması
- Matte Tin (Sn)
- Collector Emitter Voltage Vceo
- 5.5V
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Formu
- GULL WING
- Additional Feature
- HIGH RELIABILITY
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Noise Figure Db Typ F
- 1.1dB ~ 1.4dB @ 900MHz
- Fabrika Tedarik Süresi
- 6 Weeks
- Polaritychannel Type
- NPN
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