Volume pricing
- 1+ pcs$2.60
- 10+ pcs$2.46
- 100+ pcs$2.32
- 500+ pcs$2.19
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Collector Emitter Breakdown Max
- 650 V
- Temel Ürün No
- BIDW50N
- Montaj Tipi
- Through Hole
- Configuration
- Single Diode
- Tedarikçi Cihaz Paketi
- TO-247
- Igbt Type
- Trench Field Stop
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Package Type
- TO-247
- Maximum Collector Emitter Voltage
- 650 V
- Gate Charge
- 123 nC
- Ürün Durumu
- Active
- Td Onoff25c
- 37ns/125ns
- Montaj Stili
- Through Hole
- Switching Energy
- 3mJ (on), 1.1mJ (off)
- Ambalaj
- Tube
- Maks. Çalışma Sıcaklığı
- + 150 C
- Collector Emitter Voltage Vceo Max
- 650 V
- Maximum Gate Emitter Voltage
- ±20V
- Continuous Collector Current Ic Max
- 100 A
- Fabrika Paket Adedi
- 600
- Reverse Recovery Time Trr
- 37.5 ns
- Technology
- Si
- Kılıf / Paket
- TO-247-3
- Current Collector Pulsed Icm
- 150 A
- Test Conditions
- 400V, 50A, 10Ohm, 15V
- RoHS
- Details
- Paket
- Tube
- Currentcollector Ic Max
- 100 A
- Minimum Operating Temperature
- - 55 C
- Vceon Max Vge Ic
- 2.2V @ 15V, 50A
- Pd Power Dissipation
- 416 W
- Giriş Tipi
- Standard
- Power Max
- 416 W
- Collectoremitter Saturation Voltage
- 1.65 V
- Continuous Collector Current At25 C
- 100 A
- Ürün Tipi
- IGBT Transistors
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