Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tube
- Maks. Çalışma Sıcaklığı
- + 150 C
- Td Onoff25c
- 30ns/67ns
- Ürün Durumu
- Active
- Gate Charge
- 76 nC
- Maximum Collector Emitter Voltage
- 600 V
- Montaj Stili
- Through Hole
- Switching Energy
- 1.85mJ (on), 450μJ (off)
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Igbt Type
- Trench Field Stop
- Tedarikçi Cihaz Paketi
- TO-247N-3L
- Package Type
- TO-247N
- Voltage Collector Emitter Breakdown Max
- 600 V
- Configuration
- Single Diode
- Montaj Tipi
- Through Hole
- Temel Ürün No
- BIDNW30N
- Collectoremitter Saturation Voltage
- 1.65 V
- Power Max
- 230 W
- Ürün Tipi
- IGBT Transistors
- Continuous Collector Current At25 C
- 60 A
- Minimum Operating Temperature
- - 55 C
- Giriş Tipi
- Standard
- Pd Power Dissipation
- 230 W
- Vceon Max Vge Ic
- 2V @ 15V, 30A
- Current Collector Pulsed Icm
- 120 A
- Test Conditions
- 400V, 30A, 10Ohm, 15V
- Kılıf / Paket
- TO-247-3
- Currentcollector Ic Max
- 60 A
- Paket
- Tube
- RoHS
- Details
- Reverse Recovery Time Trr
- 28 ns
- Fabrika Paket Adedi
- 600
- Maximum Gate Emitter Voltage
- ±20V
- Continuous Collector Current Ic Max
- 60 A
- Collector Emitter Voltage Vceo Max
- 600 V
- Technology
- Si
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