Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e0
- Transistor Element Material
- SILICON
- Akım Değeri
- -20mA
- Terminal Formu
- WIRE
- Power Max
- 500mW
- Dc Current Gainmin Hfe
- 80
- Frequency Transition
- 190MHz
- Collectoremitter Breakdown Voltage
- 36V
- Transistor Type
- 2 PNP (Dual)
- Reach Svhc
- Unknown
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kılıf / Paket
- TO-78-6 Metal Can
- Radyasyon Dayanımı
- No
- Montaj
- Through Hole
- Parça Durumu
- Obsolete
- Vce Saturation Max Ib Ic
- 100mV @ 100μA, 1mA
- Pin Sayısı
- 6
- RoHS Durumu
- Non-RoHS Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Rated Dc
- -36V
- Montaj Tipi
- Through Hole
- Max Power Dissipation
- 500mW
- Element Configuration
- Dual
- Kurşunsuz
- Contains Lead
- Collector Base Voltage Vcbo
- 36V
- Ambalaj
- Tube
- Transistor Application
- AMPLIFIER
- Polarity
- PNP
- Kurşunsuz Kodu
- no
- Terminal Sayısı
- 6
- Max Collector Current
- 20mA
- Transition Frequency
- 190MHz
- Temel Parça No
- MAT03
- Number Of Elements
- 2
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- BOTTOM
- Vcesatmax
- 0.1 V
- Collector Emitter Voltage Vceo
- 36V
- Pin Sayısı
- 6
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