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BLS6G3135S-20,112

Ampleon USA Inc.

BLS6G3135S-20,112

RF MOSFETs Transistors

RoHS: Compliant

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Specifications

Case Connection
SOURCE
Configuration
SINGLE
Yayın Yılı
2009
Terminal Formu
FLAT
Fabrika Tedarik Süresi
13 Weeks
Parça Durumu
Not For New Designs
Kılıf / Paket
SOT-608B
Ambalaj
Tray
Number Of Elements
1
Nominal Gerilim
60V
Transistor Type
LDMOS
Power Output
20W
Voltage Test
32V
Gain
15.5dB
Ds Breakdown Voltagemin
60V
Current Rating Amps
2.1A
RoHS Durumu
ROHS3 Compliant
Operating Mode
ENHANCEMENT MODE
Current Test
50mA
Transistor Application
AMPLIFIER
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
ECCN Kodu
EAR99
Terminal Sayısı
2
Terminal Pozisyonu
DUAL
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Jesd30 Code
S-CDFP-F2
Transistor Element Material
SILICON
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frekans
3.1GHz~3.5GHz
Temel Parça No
BLS6G3135
Reference Standard
IEC-60134
Drain Currentmax Abs Id
2.1A
Yüzey Montaj
YES
Polaritychannel Type
N-CHANNEL
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED

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