BLS6G3135-20,112

Specifications

Operating Temperature Max

225°C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Terminal Sayısı

2

Terminal Pozisyonu

DUAL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reference Standard

IEC-60134

Polaritychannel Type

N-CHANNEL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yüzey Montaj

YES

Drain Currentmax Abs Id

2.1A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Jesd30 Code

S-CDFM-F2

Frekans

3.1GHz~3.5GHz

Temel Parça No

BLS6G3135

Fabrika Tedarik Süresi

13 Weeks

Kılıf / Paket

SOT-608A

Parça Durumu

Not For New Designs

Terminal Formu

FLAT

Transistor Type

LDMOS

Power Output

20W

Nominal Gerilim

60V

Ambalaj

Tray

Number Of Elements

1

Configuration

SINGLE

Case Connection

SOURCE

Yayın Yılı

2009

Transistor Application

AMPLIFIER

Operating Mode

ENHANCEMENT MODE

Current Test

50mA

Gain

15.5dB

Voltage Test

32V

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

60V

Current Rating Amps

2.1A