BLP8G20S-80PY

Specifications

Supplier Package

HSOP-F

Maximum Operating Temperature C

225

Package Width

9.96

Pin Sayısı

4

Typical Drain Efficiency

33

Process Technology

LDMOS

Typical Forward Transconductance S

0.41

Eu Rohs

Compliant with Exemption

Typical Power Gain Db

17.5

Number Of Elements Per Chip

2

Hts

8541.29.00.75

Nem Hassasiyeti (MSL)

3 (168 Hours)

Mounting

Surface Mount

Frekans

1.88GHz~1.92GHz

Eccn Us

EAR99

Package Length

20.57

Channel Type

N

Tedarikçi Cihaz Paketi

4-HSOPF

Maximum Gate Source Leakage Current Na

120

Maximum Frequency Mhz

2200

Package Height

3.6

Configuration

Dual Common Source

Minimum Frequency Mhz

1800

Pcb Changed

4

Minimum Operating Temperature C

-65

Yayın Yılı

2011

Fabrika Tedarik Süresi

13 Weeks

Maximum Drain Source Voltage V

65

Maximum Gate Threshold Voltage V

2.25

Kılıf / Paket

SOT-1223-1

Parça Durumu

Active

Output Power W

14.2(Typ)

Maximum Drain Source Resistance Mohm

320(Typ)@3.75V

Transistor Type

LDMOS (Dual), Common Source

Mode Of Operation

2-Carrier W-CDMA

Power Output

10W

Ambalaj

Tape & Reel (TR)

Nominal Gerilim

65V

Maximum Vswr

10

Gain

17.5dB