BLP25M710Z

Specifications

Minimum Operating Temperature C

-65

Configuration

COMMON SOURCE, 2 ELEMENTS

Minimum Frequency Mhz

10

Maximum Drain Source Resistance Mohm

1000(Typ)@6.05V

Transistor Type

LDMOS (Dual), Common Source

Mode Of Operation

Pulsed RF|DVB-T

Number Of Elements

2

Ambalaj

Tape & Reel (TR)

Maximum Drain Source Voltage V

65

Maximum Gate Threshold Voltage V

2.3

Parça Durumu

Active

Kılıf / Paket

12-VDFN Exposed Pad

Output Power W

10

Ds Breakdown Voltagemin

65V

Voltage Test

28V

Transistor Application

AMPLIFIER

Current Test

110mA

Maximum Idss Ua

1.4

Pin Sayısı

12

Typical Drain Efficiency

23

ECCN Kodu

EAR99

Supplier Package

HVSON EP

Terminal Sayısı

12

Package Width

4

Eu Rohs

Compliant

Frekans

2.14GHz

Eccn Us

EAR99

Package Length

6

Nem Hassasiyeti (MSL)

3 (168 Hours)

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-N12

Jedec95 Code

MO-229

Reference Standard

IEC-60134

Channel Type

N

Yayın Yılı

2011

Pcb Changed

12

Power Output

2W

Nominal Gerilim

65V

Maximum Vswr

10

Fabrika Tedarik Süresi

13 Weeks