BLP10H610AZ

Specifications

Supplier Package

HVSON EP

Eccn Us

EAR99

Maximum Frequency Mhz

1400

Process Technology

LDMOS

Mode Of Operation

CW

Channel Mode

Enhancement

Ambalaj

Tape & Reel (TR)

Minimum Operating Temperature C

-65

Current Test

60mA

Output Power W

20(Typ)

Tedarikçi Cihaz Paketi

12-HVSON (6x5)

Typical Drain Efficiency

58(Max)

Kılıf / Paket

12-VDFN Exposed Pad

Maximum Gate Source Voltage V

11

Frekans

860MHz

Maximum Operating Temperature C

150

Mounting

Surface Mount

Number Of Elements Per Chip

2

Pcb Changed

12

Typical Power Gain Db

22

Package Height

0.82

Fabrika Tedarik Süresi

13 Weeks

Package Length

6

Maximum Gate Source Leakage Current Na

120

Minimum Frequency Mhz

10

Gain

22dB

Maximum Drain Source Resistance Mohm

2300(Typ)@6V

Maximum Drain Source Voltage V

104

Channel Type

N

RoHS Durumu

ROHS3 Compliant

Maximum Idss Ua

1.2

Eu Rohs

Compliant

Package Width

5

Nem Hassasiyeti (MSL)

3 (168 Hours)

Maximum Gate Threshold Voltage V

1.8(Typ)

Power Output

10W

Transistor Type

LDMOS (Dual), Common Source

Hts

8541.29.00.75

Pin Sayısı

12

Yayın Yılı

2011