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BLF8G24LS-200P,112

Ampleon USA Inc.

BLF8G24LS-200P,112

RF MOSFETs Transistors

RoHS: Compliant

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Specifications

Current Test
1.74A
Polaritychannel Type
N-CHANNEL
Configuration
COMMON SOURCE, 2 ELEMENTS
Reference Standard
IEC-60134
Terminal Sayısı
4
Nem Hassasiyeti (MSL)
1 (Unlimited)
REACH Uyumluluk Kodu
unknown
Transistor Application
AMPLIFIER
RoHS Durumu
Non-RoHS Compliant
ECCN Kodu
EAR99
Power Output
60W
Parça Durumu
Obsolete
Gain
17.2dB
Terminal Formu
FLAT
Operating Mode
ENHANCEMENT MODE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Voltage Test
28V
Yayın Yılı
2010
Transistor Type
LDMOS (Dual), Common Source
Kılıf / Paket
SOT539B
Frekans
2.3GHz~2.4GHz
Nominal Gerilim
65V
Temel Parça No
BLF8G24
Transistor Element Material
SILICON
Jesd30 Code
R-CDFP-F4
Number Of Elements
2
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Yüzey Montaj
YES
Ambalaj
Tube
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Ds Breakdown Voltagemin
65V

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