BLF8G22LS-160BV:11

Specifications

Reference Standard

IEC-60134

Configuration

COMMON SOURCE, 2 ELEMENTS

Typical Power Gain Db

18

Terminal Sayısı

6

Minimum Operating Temperature C

-65

Current Test

1.3A

Polaritychannel Type

N-CHANNEL

Maximum Frequency Mhz

2170

Mounting

Surface Mount

Channel Mode

Enhancement

Maximum Operating Temperature C

200

Transistor Application

AMPLIFIER

Eccn Us

EAR99

RoHS Durumu

RoHS Compliant

REACH Uyumluluk Kodu

unknown

Pin Sayısı

7

Parça Durumu

Obsolete

Maximum Gate Threshold Voltage V

2.3

Maximum Idss Ua

4.5

Terminal Formu

UNSPECIFIED

Process Technology

LDMOS

Frekans

2.11GHz~2.17GHz

Transistor Element Material

SILICON

Nominal Gerilim

65V

Jesd30 Code

R-CQFP-X6

Yayın Yılı

2011

Transistor Type

LDMOS (Dual), Common Source

Output Power W

55(Typ)

Maximum Drain Source Voltage V

65

Package Height

4.75(Max)

Supplier Package

CDFM

Mode Of Operation

2-Carrier W-CDMA

Pcb Changed

7

Ambalaj

Tape & Reel (TR)

Channel Type

N

Number Of Elements

2

Maximum Gate Source Voltage V

13

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Gate Source Leakage Current Na

450