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BLF6G38S-25,112

Ampleon USA Inc.

BLF6G38S-25,112

RF MOSFETs Transistors

RoHS: Compliant

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Specifications

Power Output
4.5W
Fabrika Tedarik Süresi
13 Weeks
Transistor Element Material
SILICON
Transistor Type
LDMOS
Drain Currentmax Abs Id
8.2A
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Voltage Test
28V
Frekans
3.4GHz~3.6GHz
Ambalaj
Tray
Configuration
SINGLE
ECCN Kodu
EAR99
Reference Standard
IEC-60134
Case Connection
SOURCE
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
SOT-608B
Nominal Gerilim
65V
RoHS Durumu
Non-RoHS Compliant
Yayın Yılı
2008
Current Test
225mA
Gain
15dB
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Terminal Sayısı
2
Terminal Pozisyonu
DUAL
Temel Parça No
BLF6G38
Transistor Application
AMPLIFIER
Polaritychannel Type
N-CHANNEL
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Formu
FLAT
REACH Uyumluluk Kodu
unknown
Yüzey Montaj
YES
Number Of Elements
1
Jesd30 Code
S-CDFP-F2
Operating Mode
ENHANCEMENT MODE
Parça Durumu
Obsolete
Current Rating Amps
8.2A
Ds Breakdown Voltagemin
65V

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