BLF6G38-10,112

Specifications

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

1256@6.15V

Power Output

2W

Typical Drain Efficiency

20

Process Technology

LDMOS

Transistor Type

LDMOS

Mounting

Surface Mount

Frekans

3.4GHz~3.6GHz

Pcb Changed

3

Voltage Test

28V

Maximum Drain Source Voltage V

65

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Gate Source Voltage V

13

Configuration

Single

Maximum Vswr

10

Ambalaj

Tray

Maximum Operating Temperature C

200

Yayın Yılı

2009

RoHS Durumu

RoHS Compliant

Mode Of Operation

1-Carrier N-CDMA

Output Power W

2(Typ)

Package Width

6.93(Max)

Nominal Gerilim

65V

Kılıf / Paket

SOT-975B

Tedarikçi Cihaz Paketi

CDFM2

Package Height

3.63(Max)

Eccn Us

EAR99

Supplier Package

CDFM

Temel Parça No

BLF6G38

Minimum Frequency Mhz

3400

Minimum Operating Temperature C

-65

Maximum Frequency Mhz

3600

Gain

14dB

Number Of Elements Per Chip

1

Current Test

130mA

Typical Power Gain Db

14

Military

No

Typical Forward Transconductance S

0.8(Min)

Pin Sayısı

3

Typical Reverse Transfer Capacitance Vds Pf

3.6@28V