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BLF6G10LS-200RN:11

Ampleon USA Inc.

BLF6G10LS-200RN:11

RF MOSFETs Transistors

RoHS: Compliant

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Specifications

Transistor Element Material
SILICON
Transistor Type
LDMOS
Power Output
40W
Fabrika Tedarik Süresi
13 Weeks
Ambalaj
Tray
Case Connection
SOURCE
Configuration
SINGLE
ECCN Kodu
EAR99
Reference Standard
IEC-60134
Nem Hassasiyeti (MSL)
1 (Unlimited)
Drain Currentmax Abs Id
49A
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Voltage Test
28V
Frekans
871.5MHz~891.5MHz
Gain
20dB
Current Test
1.4A
Terminal Pozisyonu
DUAL
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Terminal Sayısı
2
Temel Parça No
BLF6G10
Kılıf / Paket
SOT-502B
Nominal Gerilim
65V
RoHS Durumu
ROHS3 Compliant
Yayın Yılı
2009
Number Of Elements
1
Yüzey Montaj
YES
Jesd30 Code
R-CDFP-F2
Operating Mode
ENHANCEMENT MODE
Parça Durumu
Active
Ds Breakdown Voltagemin
65V
Current Rating Amps
49A
Terminal Formu
FLAT
Polaritychannel Type
N-CHANNEL
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transistor Application
AMPLIFIER

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