Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 13 Weeks
- Reference Standard
- IEC-60134
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Operating Mode
- ENHANCEMENT MODE
- Yüzey Montaj
- YES
- Frekans
- 225MHz
- Ds Breakdown Voltagemin
- 110V
- ECCN Kodu
- EAR99
- Terminal Formu
- FLAT
- Gain
- 24dB
- Terminal Sayısı
- 4
- Current Test
- 40mA
- Current Rating Amps
- 88A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Nominal Gerilim
- 110V
- Yayın Yılı
- 2009
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Jesd30 Code
- R-CDFM-F4
- Ambalaj
- Tray
- Power Output
- 1200W
- Transistor Type
- LDMOS (Dual), Common Source
- Number Of Elements
- 2
- Transistor Application
- AMPLIFIER
- Drain Currentmax Abs Id
- 88A
- Polaritychannel Type
- N-CHANNEL
- Kılıf / Paket
- SOT539A
- Configuration
- COMMON SOURCE, 2 ELEMENTS
- Voltage Test
- 50V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
Related Products
Microchip
0105-50
RF MOSFETs Transistors
Microchip
0405SC-1000M
RF MOSFETs Transistors
Microsemi
0405SC-100M
RF MOSFETs Transistors
Microchip
0405SC-1500M
RF MOSFETs Transistors
Microchip Technology
0912GN-100LV
RF MOSFETs Transistors
Microchip Technology
0912GN-15E
RF MOSFETs Transistors
Microchip Technology
0912GN-15EL
RF MOSFETs Transistors
Microchip Technology
0912GN-15EP
RF MOSFETs Transistors