BLC8G20LS-400AVZ

Specifications

Transistor Type

LDMOS (Dual), Common Source

Maximum Idss Ua

2.8

Process Technology

LDMOS

Typical Drain Efficiency

44

Maximum Gate Source Leakage Current Na

280

Automotive

Unknown

Fabrika Tedarik Süresi

13 Weeks

Power Output

85W

Maximum Drain Source Resistance Mohm

135@6.05V

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

3 (168 Hours)

Maximum Operating Temperature C

225

Ambalaj

Tray

Maximum Vswr

10

Configuration

Dual Common Source

Maximum Gate Source Voltage V

13

Voltage Test

32V

Frekans

1.81GHz~1.88GHz

Maximum Drain Source Voltage V

65

Minimum Frequency Mhz

1800

Eccn Us

EAR99

Number Of Elements Per Chip

2

Current Test

800mA

Ppap

Unknown

Gain

15.5dB

Maximum Frequency Mhz

2000

Minimum Operating Temperature C

-65

Mode Of Operation

1-Carrier W-CDMA

RoHS Durumu

Non-RoHS Compliant

Yayın Yılı

2011

Tedarikçi Cihaz Paketi

SOT-1258-3

Kılıf / Paket

SOT-1258-3

Nominal Gerilim

65V

Output Power W

475(Typ)

Channel Type

N

Maximum Gate Threshold Voltage V

2.3

Parça Durumu

Obsolete

Typical Forward Transconductance S

19

Typical Power Gain Db

15.5

Eu Rohs

Compliant