BLP9G0722-20G

Specifications

Minimum Frequency Mhz

100

Pcb Changed

3

Configuration

Single

Tip

MOSFET

Minimum Operating Temperature C

-65

Output Power W

20

Maximum Gate Threshold Voltage V

2(Typ)

Parça Durumu

Active

Maximum Drain Source Voltage V

65

Maximum Vswr

10

Maximum Drain Source Resistance Mohm

500(Typ)@5.75V

Mode Of Operation

1-Carrier W-CDMA

Military

No

Maximum Gate Source Voltage V

13

Channel Mode

Enhancement

Maximum Idss Ua

1.4

Package Width

6.1

Supplier Package

TO-270

Maximum Operating Temperature C

225

Process Technology

LDMOS

Pin Sayısı

3

Typical Drain Efficiency

22

Typical Forward Transconductance S

0.3

Typical Power Gain Db

19

Number Of Elements Per Chip

1

Mounting

Surface Mount

Package Length

9.65

Eccn Us

EAR99

Channel Type

N

Package Height

2.03

Maximum Gate Source Leakage Current Na

140

Maximum Frequency Mhz

2700