BLP35M805

Specifications

Package Width

4

Supplier Package

HVSON EP

Maximum Operating Temperature C

225

Process Technology

LDMOS

Pin Sayısı

16

Typical Drain Efficiency

17

Typical Forward Transconductance S

0.08

Typical Power Gain Db

18

Number Of Elements Per Chip

1

Mounting

Surface Mount

Package Length

6

Eccn Us

EAR99

Channel Type

N

Package Height

0.82

Maximum Frequency Mhz

3500

Maximum Gate Source Leakage Current Na

140

Minimum Frequency Mhz

10

Pcb Changed

16

Configuration

Single

Minimum Operating Temperature C

-65

Output Power W

5

Maximum Drain Source Voltage V

65

Parça Durumu

Active

Maximum Gate Threshold Voltage V

2.3

Ambalaj

Tape and Reel

Maximum Vswr

10

Maximum Drain Source Resistance Mohm

2000(Typ)@6.05V

Military

No

Mode Of Operation

Pulsed CW

Maximum Gate Source Voltage V

13

Channel Mode

Enhancement

RoHS Durumu

RoHS Compliant

Maximum Idss Ua

1.4