BLP15M7160P

Specifications

Package Height

3.6

Package Length

20.57

Maximum Gate Source Leakage Current Na

140

Minimum Frequency Mhz

10

Maximum Drain Source Resistance Mohm

200(Typ)@6.05V

Maximum Drain Source Voltage V

65

Channel Type

N

Maximum Idss Ua

1.4

RoHS Durumu

RoHS Compliant

Package Width

9.96

Typical Forward Transconductance S

6

Maximum Gate Threshold Voltage V

2.3

Pin Sayısı

4

Configuration

Dual Common Source

Parça Durumu

Active

Supplier Package

HSOP-F

Eccn Us

EAR99

Process Technology

LDMOS

Maximum Frequency Mhz

1500

Typical Reverse Transfer Capacitance Vds Pf

1.6@28V

Typical Output Capacitance Vds Pf

50@28V

Mode Of Operation

Class-B|Pulse

Channel Mode

Enhancement

Military

No

Minimum Operating Temperature C

-65

Maximum Vswr

10

Output Power W

160(Typ)

Typical Input Capacitance Vds Pf

81@28V

Typical Drain Efficiency

59.7

Maximum Gate Source Voltage V

11

Maximum Operating Temperature C

200

Mounting

Surface Mount

Number Of Elements Per Chip

2

Pcb Changed

4

Typical Power Gain Db

19.4