BLP10H605, 531

Specifications

Eccn Us

EAR99

Supplier Package

HVSON EP

Process Technology

LDMOS

Maximum Frequency Mhz

1400

Minimum Operating Temperature C

-65

Military

No

Ambalaj

Tape and Reel

Channel Mode

Enhancement

Mode Of Operation

CW

Maximum Vswr

35

Maximum Gate Source Voltage V

11

Typical Drain Efficiency

59.6(Max)

Output Power W

5

Maximum Operating Temperature C

150

Pcb Changed

12

Typical Power Gain Db

22.4

Number Of Elements Per Chip

2

Mounting

Surface Mount

Maximum Gate Source Leakage Current Na

60

Package Length

6

Package Height

0.82

Maximum Drain Source Voltage V

104

Channel Type

N

RoHS Durumu

RoHS Compliant

Maximum Idss Ua

0.6

Package Width

5

Maximum Gate Threshold Voltage V

1.8(Typ)

Pin Sayısı

12

Parça Durumu

Active

Configuration

Dual Common Source