BLP10H603

Specifications

Channel Type

N

RoHS Durumu

RoHS Compliant

Maximum Idss Ua

1.4

Maximum Gate Source Leakage Current Na

140

Package Length

6

Package Height

0.82

Maximum Drain Source Voltage V

104

Maximum Drain Source Resistance Mohm

9000(Typ)@6V

Minimum Frequency Mhz

10

Package Description

,

Pin Sayısı

12

Ihs Manufacturer

NXP SEMICONDUCTORS

Configuration

Single

Parça Durumu

Active

Üretici Parça No

BLP10H603

Package Width

5

Maximum Gate Threshold Voltage V

2.25

Risk Rank

5.69

Typical Output Capacitance Vds Pf

1.12@50V

Part Life Cycle Code

Transferred

Minimum Operating Temperature C

-65

Military

No

Channel Mode

Enhancement

Mode Of Operation

CW

Eccn Us

EAR99

Supplier Package

HVSON EP

Typical Reverse Transfer Capacitance Vds Pf

0.03@50V

Maximum Frequency Mhz

1400

REACH Uyumluluk Kodu

unknown

Process Technology

LDMOS

Maximum Operating Temperature C

150

Typical Power Gain Db

22.8

Pcb Changed

12

Number Of Elements Per Chip

1

Mounting

Surface Mount

Maximum Vswr

35

Maximum Gate Source Voltage V

11

Typical Drain Efficiency

62

Typical Input Capacitance Vds Pf

3.4@0V

Output Power W

2.5