BLP05H6350XR

Specifications

Typical Input Capacitance Vds Pf

161@50V

Output Power W

350

Typical Drain Efficiency

75

Maximum Gate Source Voltage V

11

Maximum Vswr

65

Mounting

Surface Mount

Number Of Elements Per Chip

2

Typical Power Gain Db

27.5

Pcb Changed

4

Maximum Operating Temperature C

225

Maximum Frequency Mhz

600

Process Technology

LDMOS

Typical Reverse Transfer Capacitance Vds Pf

1.3@50V

Supplier Package

HSOP-F

Eccn Us

EAR99

Mode Of Operation

Pulsed RF

Ambalaj

Tape and Reel

Channel Mode

Enhancement

Military

No

Minimum Operating Temperature C

-65

Typical Output Capacitance Vds Pf

53@50V

Maximum Gate Threshold Voltage V

2.33

Hts

8541.29.00.75

Package Width

9.96

Configuration

Dual Common Source

Parça Durumu

Active

Pin Sayısı

4

Minimum Frequency Mhz

10

Maximum Drain Source Resistance Mohm

290(Typ)@6.08V

Maximum Drain Source Voltage V

135

Package Height

3.6

Package Length

20.57

Maximum Gate Source Leakage Current Na

140

Maximum Idss Ua

1.4

RoHS Durumu

RoHS Compliant

Channel Type

N