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C3 ChipZentronix
BLP05H6150XRG

Ampleon

BLP05H6150XRG

RF MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Configuration
Dual Common Source
Parça Durumu
Active
Pin Sayısı
4
Maximum Gate Threshold Voltage V
2.25
Package Width
9.96
RoHS Durumu
Yes with exemptions
Maximum Idss Ua
1.4
Channel Type
N
Minimum Frequency Mhz
10
Maximum Drain Source Voltage V
135
Maximum Drain Source Resistance Mohm
800(Typ)@6V
Package Length
20.57
Package Height
3.9(Max)
Maximum Gate Source Leakage Current Na
140
Mounting
Surface Mount
Pcb Changed
4
Typical Power Gain Db
27
Number Of Elements Per Chip
2
Maximum Operating Temperature C
225
Typical Drain Efficiency
75
Output Power W
150
Typical Input Capacitance Vds Pf
60@50V
Maximum Gate Source Voltage V
11
Maximum Vswr
65
Ambalaj
Tape and Reel
Channel Mode
Enhancement
Mode Of Operation
Pulsed RF
Minimum Operating Temperature C
-65
Military
No
Typical Output Capacitance Vds Pf
21@50V
Typical Reverse Transfer Capacitance Vds Pf
0.5@50V
Process Technology
LDMOS
Maximum Frequency Mhz
600
Supplier Package
HSOP-F
Eccn Us
EAR99

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