BLL8H0514L-130

Specifications

Maximum Idss Ua

1.4

Channel Type

N

Military

No

Part Life Cycle Code

Transferred

REACH Uyumluluk Kodu

unknown

Package Height

4.65(Max)

Automotive

Unknown

Maximum Gate Threshold Voltage V

2.25

Maximum Operating Temperature C

225

Output Power W

130(Typ)

Typical Forward Transconductance S

1.578(Max)

Maximum Vswr

5

Mounting

Screw

Pcb Changed

3

Mode Of Operation

Pulsed RF

Maximum Gate Source Leakage Current Na

140

Maximum Frequency Mhz

1400

Typical Drain Efficiency

50

Number Of Elements Per Chip

1

RoHS Durumu

RoHS Compliant

Configuration

Single

Supplier Package

CDFM

Package Length

20.45(Max)

Typical Rise Time Ns

20

Typical Power Gain Db

17

Üretici Parça No

BLL8H0514L-130

Package Width

9.91(Max)

Maximum Drain Source Voltage V

100

Package Description

,

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

275@8.5V

Eccn Us

EAR99

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.74

Minimum Operating Temperature C

-65

Process Technology

LDMOS

Typical Fall Time Ns

6

Pin Sayısı

3

Minimum Frequency Mhz

500

Maximum Gate Source Voltage V

13