BLF6G27S-45K,118

Specifications

Maximum Gate Threshold Voltage V

2.4

Package Length

10.29(Max)

Maximum Continuous Drain Current A

20

Channel Type

N

Typical Forward Transconductance S

4.3

Typical Power Gain Db

18

Military

No

Typical Reverse Transfer Capacitance Vds Pf

1.1@28V

Pin Sayısı

3

Minimum Frequency Mhz

2500

Package Height

4.62(Max)

Supplier Package

CDFM

Eccn Us

EAR99

Number Of Elements Per Chip

1

Maximum Frequency Mhz

2700

Minimum Operating Temperature C

-65

Mode Of Operation

1-Carrier N-CDMA

Package Width

10.29(Max)

Output Power W

7(Typ)

Ambalaj

Tape and Reel

Maximum Operating Temperature C

200

Maximum Gate Source Voltage V

13

Maximum Vswr

10

Configuration

Single

Pcb Changed

3

Maximum Drain Source Voltage V

65

Maximum Idss Ua

1.4

Typical Drain Efficiency

24

Process Technology

LDMOS

Maximum Gate Source Leakage Current Na

140

Mounting

Surface Mount

Channel Mode

Enhancement

Tip

MOSFET

Maximum Drain Source Resistance Mohm

385@6.15V