BLF183XR

Specifications

Maximum Vswr

65

Maximum Frequency Mhz

600

Maximum Operating Temperature C

225

Channel Mode

Enhancement

Minimum Frequency Mhz

10

Configuration

Dual Common Source

Eccn Us

EAR99

Military

No

Maximum Idss Ua

1.4

Maximum Drain Source Voltage V

135

Typical Output Capacitance Vds Pf

51@50V

Mode Of Operation

Pulsed RF

Typical Input Capacitance Vds Pf

156@50V

Channel Type

N

Maximum Gate Source Leakage Current Na

140

Maximum Gate Source Voltage V

11

Number Of Elements Per Chip

2

Typical Drain Efficiency

75

Typical Reverse Transfer Capacitance Vds Pf

1.1@50V

Minimum Operating Temperature C

-65

Process Technology

LDMOS

RoHS Durumu

RoHS Compliant

Maximum Gate Threshold Voltage V

2.33

Maximum Drain Source Resistance Mohm

290(Typ)@6.08V

Output Power W

400

Typical Power Gain Db

28

Parça Durumu

Active