BLC2425M10LS250

Specifications

Maximum Gate Source Leakage Current Na

280

Mounting

Surface Mount

Maximum Idss Ua

2.8

Typical Drain Efficiency

68.7

Process Technology

LDMOS

Maximum Drain Source Resistance Mohm

40.5(Typ)@6.43V

Tip

MOSFET

Channel Mode

Enhancement

Maximum Operating Temperature C

225

Configuration

Single

Maximum Vswr

20

Maximum Gate Source Voltage V

13

Maximum Drain Source Voltage V

65

Pcb Changed

3

Number Of Elements Per Chip

1

Maximum Frequency Mhz

2500

Minimum Operating Temperature C

-65

Minimum Frequency Mhz

2400

Supplier Package

SOT1270-1

Eccn Us

EAR99

Package Height

4.01(Max)

Package Width

9.91(Max)

Output Power W

260(Typ)

RoHS Durumu

RoHS Compliant

Mode Of Operation

Pulsed RF Class-AB

Channel Type

N

Maximum Gate Threshold Voltage V

2.68

Package Length

20.7(Max)

Parça Durumu

Active

Pin Sayısı

3

Typical Forward Transconductance S

22.6

Military

No

Typical Power Gain Db

14.4