BLC10M6SX200Z

Specifications

Typical Forward Transconductance S

17

Military

No

Typical Power Gain Db

19.5

Pin Sayısı

3

Channel Type

N

Maximum Gate Threshold Voltage V

2.4

Package Length

20.7(Max)

Parça Durumu

LTB

Mode Of Operation

2-Carrier W-CDMA

Package Width

9.91(Max)

Output Power W

200(Typ)

Minimum Frequency Mhz

425

Supplier Package

SOT1270-1

Eccn Us

EAR99

Package Height

4.01(Max)

Number Of Elements Per Chip

1

Maximum Frequency Mhz

450

Minimum Operating Temperature C

-65

Pcb Changed

3

Maximum Drain Source Voltage V

65

Maximum Operating Temperature C

225

Ambalaj

Tray

Maximum Vswr

20

Configuration

Single

Maximum Gate Source Voltage V

13

Maximum Drain Source Resistance Mohm

90@6.15V

Tip

MOSFET

Channel Mode

Enhancement

Maximum Idss Ua

4.2

Process Technology

LDMOS

Typical Drain Efficiency

29.5

Maximum Gate Source Leakage Current Na

420

Mounting

Surface Mount