BLC10G27LS-320AVT

Specifications

Maximum Drain Source Resistance Mohm

170@4.87V

Tip

MOSFET

Channel Mode

Enhancement

Automotive

Unknown

Mounting

Surface Mount

Maximum Gate Source Leakage Current Na

280

Process Technology

LDMOS

Typical Drain Efficiency

42

Maximum Idss Ua

2.8

Maximum Drain Source Voltage V

65

Pcb Changed

7

Maximum Vswr

10

Configuration

Dual Common Source

Maximum Gate Source Voltage V

13

Maximum Operating Temperature C

225

Output Power W

50(Typ)

Package Width

10.23(Max)

Mode Of Operation

1-Carrier W-CDMA

Minimum Operating Temperature C

-65

Maximum Frequency Mhz

2700

Number Of Elements Per Chip

2

Eccn Us

EAR99

Supplier Package

DFM

Package Height

4.65(Max)

Minimum Frequency Mhz

2500

Pin Sayısı

7

Military

No

Typical Power Gain Db

15.4

Typical Forward Transconductance S

23

Parça Durumu

Active

Channel Type

N

Package Length

32.33(Max)

Maximum Gate Threshold Voltage V

2.5