BLC10G18XS-360AVT

Specifications

Maximum Drain Source Voltage V

65

Pcb Changed

7

Maximum Gate Source Voltage V

9

Configuration

Dual Common Source

Maximum Vswr

10

Maximum Operating Temperature C

125

Channel Mode

Enhancement

Tip

MOSFET

Maximum Drain Source Resistance Mohm

148@6.25V

Mounting

Surface Mount

Maximum Gate Source Leakage Current Na

280

Typical Drain Efficiency

50

Process Technology

LDMOS

Maximum Idss Ua

2.8

Pin Sayısı

7

Typical Power Gain Db

15.4

Military

No

Typical Forward Transconductance S

20

Parça Durumu

Active

Maximum Gate Threshold Voltage V

2.5

Package Length

32.33(Max)

Channel Type

N

Output Power W

410(Typ)

Package Width

10.23(Max)

Mode Of Operation

1-Carrier W-CDMA

Minimum Operating Temperature C

-40

Maximum Frequency Mhz

1880

Number Of Elements Per Chip

2

Package Height

4.52(Max)

Supplier Package

DFM

Eccn Us

EAR99

Minimum Frequency Mhz

1805