CB-04RFMS-RC8C15

Specifications

Id Continuous Drain Current

17 A

RoHS

Details

Vds Drainsource Breakdown Voltage

800 V

Transistor Type

1 N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Birim Ağırlık

0.068784 oz

Vgs Gatesource Voltage

- 20 V, + 20 V

Ürün Tipi

MOSFET

Yükseklik

16.15 mm

Transistor Polarity

N-Channel

Number Of Channels

1 Channel

Configuration

Single

Part Aliases

SP000216353 SPA17N80C3 SPA17N80C3XKSA1

Rise Time

15 ns

Typical Turnoff Delay Time

72 ns

Channel Mode

Enhancement

Fabrika Paket Adedi

500

Uzunluk

10.65 mm

Ambalaj

Tube

Qg Gate Charge

177 nC

Genişlik

4.85 mm

Technology

Si

Vgs Th Gatesource Threshold Voltage

2.1 V

Forward Transconductance Min

15 S

Kılıf / Paket

TO-220-3

Rds On Drainsource Resistance

250 mOhms

Minimum Operating Temperature

- 55 C

Typical Turnon Delay Time

25 ns

Montaj Stili

Through Hole

Pd Power Dissipation

42 W