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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Dual
- Yüzey Montaj
- YES
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Yükseklik
- 1.5mm
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 35 mOhm @ 6A, 4.5V
- Nominal Vgs
- 900 mV
- Direnç
- 35MOhm
- Uzunluk
- 5mm
- Lead Free Status Rohs Status
- Lead free / RoHS Compliant
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Current Continuous Drain Id25
- 3.92A
- Other Names
- NTMD6N02R2GOS NTMD6N02R2GOS-ND NTMD6N02R2GOSTR
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 20nC @ 4.5V
- Gate To Source Voltage Vgs
- 12V
- ECCN Kodu
- EAR99
- Drain To Source Voltage Vdss
- 20V
- Transistor Element Material
- SILICON
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- JESD-609 Kodu
- e3
- Number Of Elements
- 2
- Turn On Delay Time
- 12 ns
- Avalanche Energy Rating Eas
- 360 mJ
- Drain To Source Breakdown Voltage
- 20V
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 2W
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Power Max
- 730mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fabrika Tedarik Süresi
- 45 Weeks
- Terminal Sayısı
- 8
- Max Power Dissipation
- 2W
- Rise Time
- 50ns
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- Fet Feature
- Logic Level Gate
- Terminal Formu
- GULL WING
- Akım Değeri
- 6A
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