618.7735.038

Specifications

Id Continuous Drain Current

6.3 A

Montaj Stili

Through Hole

Part Aliases

FQPF630_NL

Tradename

QFET

Vgs Th Gatesource Threshold Voltage

2 V

Seri

FQPF630

Rds On Drainsource Resistance

400 mOhms

Configuration

Single

Birim Ağırlık

0.068784 oz

Qg Gate Charge

25 nC

Fabrika Paket Adedi

1000

Vgs Gatesource Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 55 C

Itar Registered

Unavailable

Transistor Polarity

N-Channel

Genişlik

4.9 mm

Typical Turnoff Delay Time

47 ns

Ürün Tipi

MOSFET

Channel Mode

Enhancement

Technology

Si

Yükseklik

16.07 mm

Eccn

EAR99

Uzunluk

10.36 mm

Ambalaj

Tube

Pd Power Dissipation

38 W

Tip

MOSFET

Transistor Type

1 N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Rise Time

75 ns

Kılıf / Paket

TO-220-3

Typical Turnon Delay Time

8 ns

Forward Transconductance Min

4.2 S

Number Of Channels

1 Channel

RoHS

Details

Vds Drainsource Breakdown Voltage

200 V