AON6946

Specifications

Yayın Yılı

2011

Montaj Tipi

Surface Mount

Number Of Elements

2

Current Continuous Drain Id25

14A 18A

Continuous Drain Current Id

18A

Input Capacitance Ciss Max Vds

485pF @ 15V

Max Power Dissipation

3.9W

Terminal Pozisyonu

DUAL

Fet Feature

Logic Level Gate

Rds On Max Id Vgs

11.6m Ω @ 13A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

30V

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Type

2 N-Channel (Half Bridge)

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN SOURCE

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Power Max

3.5W 3.9W

Terminal Formu

FLAT

Montaj

Surface Mount

Ds Breakdown Voltagemin

30V

Parça Durumu

Active

Jesd30 Code

R-PDSO-F6

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

64A

Drain Currentmax Abs Id

16A

Avalanche Energy Rating Eas

9 mJ

Terminal Sayısı

6

Kılıf / Paket

8-PowerVDFN

Gate Charge Qg Max Vgs

15nC @ 10V

Vgsth Max Id

2.2V @ 250μA

Transistor Application

SWITCHING

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.0116Ohm