Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kılıf / Paket
- 8-SMD, Flat Lead Exposed Pad
- Fet Type
- 2 N-Channel (Dual) Common Drain
- Gate Charge Qg Max Vgs
- 34nC @ 10V
- Fet Feature
- Logic Level Gate
- Rds On Max Id Vgs
- 4.4m Ω @ 20A, 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Voltage Vdss
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 18 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Vgsth Max Id
- 2.2V @ 250μA
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2010
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Power Max
- 4.1W
- Montaj
- Surface Mount
- Continuous Drain Current Id
- 25A
- Input Capacitance Ciss Max Vds
- 1720pF @ 15V
- Max Power Dissipation
- 4.1W
- Drain Currentmax Abs Id
- 20A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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