AON2800

Specifications

Fet Type

2 N-Channel (Dual) Common Drain

Gate Charge Qg Max Vgs

6nC @ 4.5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kılıf / Paket

6-WDFN Exposed Pad

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

20V

Fet Feature

Logic Level Gate

Rds On Max Id Vgs

47m Ω @ 4A, 4.5V

RoHS Durumu

RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

1.2V @ 250μA

Montaj Tipi

Surface Mount

Yayın Yılı

2009

Parça Durumu

Obsolete

Power Max

1.5W

Montaj

Surface Mount

Max Power Dissipation

1.5W

Input Capacitance Ciss Max Vds

435pF @ 10V

Continuous Drain Current Id

4.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)