AO8820

Specifications

Drain To Source Voltage Vdss

20V

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Number Of Elements

2

Transistor Application

SWITCHING

Rds On Max Id Vgs

21m Ω @ 7A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Fet Type

2 N-Channel (Dual) Common Drain

Terminal Sayısı

8

Vgsth Max Id

1.1V @ 250μA

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.021Ohm

Power Max

1.5W

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

9nC @ 4.5V

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Parça Durumu

Active

Ds Breakdown Voltagemin

20V

Input Capacitance Ciss Max Vds

500pF @ 10V

Continuous Drain Current Id

7A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

Drain Currentmax Abs Id

7A

Max Power Dissipation

1.5W