AO8810

Specifications

Drain Currentmax Abs Id

7A

Pin Sayısı

8

Max Power Dissipation

1.5W

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Continuous Drain Current Id

7A

Input Capacitance Ciss Max Vds

1295pF @ 10V

Ds Breakdown Voltagemin

20V

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Not For New Designs

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

14nC @ 4.5V

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Power Max

1.5W

Terminal Sayısı

8

Drainsource On Resistancemax

0.0205Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Vgsth Max Id

1.1V @ 250μA

Rds On Max Id Vgs

20m Ω @ 7A, 4.5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Transistor Application

SWITCHING

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Drain To Source Voltage Vdss

20V

Fet Type

2 N-Channel (Dual) Common Drain

Fabrika Tedarik Süresi

16 Weeks

Yayın Yılı

2005