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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 N-Channel (Dual)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 60m Ω @ 3.4A, 10V
- Terminal Sayısı
- 6
- Gate To Source Voltage Vgs
- 12V
- Power Dissipation
- 1.15W
- Gate Charge Qg Max Vgs
- 10nC @ 10V
- Number Of Elements
- 2
- Pin Sayısı
- 6
- Fet Feature
- Logic Level Gate
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 30V
- Terminal Formu
- GULL WING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Input Capacitance Ciss Max Vds
- 235pF @ 15V
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 1.5V @ 250μA
- Parça Durumu
- Not For New Designs
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 30V
- Kılıf / Paket
- SC-74, SOT-457
- Max Power Dissipation
- 1.15W
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 3.4A
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
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