AO5600E

Specifications

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

20V

Kılıf / Paket

SOT-563, SOT-666

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

RoHS Durumu

RoHS Compliant

Max Power Dissipation

380mW

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount

Continuous Drain Current Id

500mA

Input Capacitance Ciss Max Vds

45pF @ 10V

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PDSO-F6

Vgsth Max Id

1V @ 250μA

Parça Durumu

Obsolete

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Fet Feature

Logic Level Gate

Montaj Tipi

Surface Mount

Drainsource On Resistancemax

0.75Ohm

Terminal Formu

FLAT

Ds Breakdown Voltagemin

20V

Current Continuous Drain Id25

600mA 500mA

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N and P-Channel

Rds On Max Id Vgs

650m Ω @ 500mA, 4.5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

6

Yayın Yılı

2007

Number Of Elements

1

Gate Charge Qg Max Vgs

1nC @ 4.5V