Volume pricing
- 1+ pcs$0.61
- 10+ pcs$0.58
- 100+ pcs$0.55
- 500+ pcs$0.52
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj
- Surface Mount
- Continuous Drain Current Id
- 7.1A
- RoHS Durumu
- ROHS3 Compliant
- Max Power Dissipation
- 2W
- Operating Mode
- ENHANCEMENT MODE
- Feedback Capmax Crss
- 175 pF
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drain To Source Voltage Vdss
- 30V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 18 Weeks
- Parça Durumu
- Active
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 2.5V @ 250μA
- Input Capacitance Ciss Max Vds
- 1250pF @ 15V
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Pin Sayısı
- 8
- Ds Breakdown Voltagemin
- 30V
- ECCN Kodu
- EAR99
- Fet Feature
- Logic Level Gate
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Additional Feature
- ULTRA-LOW RESISTANCE
- Gate To Source Voltage Vgs
- 20V
- Yayın Yılı
- 2011
- Number Of Elements
- 2
- Gate Charge Qg Max Vgs
- 19nC @ 10V
- Power Dissipation
- 2W
- Terminal Sayısı
- 8
- Fet Type
- 2 P-Channel (Dual)
- Rds On Max Id Vgs
- 25m Ω @ 7.1A, 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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