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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drain To Source Voltage Vdss
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Feedback Capmax Crss
- 50 pF
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 2W
- RoHS Durumu
- ROHS3 Compliant
- Continuous Drain Current Id
- 5.5A
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Input Capacitance Ciss Max Vds
- 310pF @ 15V
- Transistor Application
- SWITCHING
- Vgsth Max Id
- 2.4V @ 250μA
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- DUAL
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 18 Weeks
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- Fet Feature
- Logic Level Gate
- Montaj Tipi
- Surface Mount
- Drain Currentmax Abs Id
- 6A
- Drainsource On Resistancemax
- 0.03Ohm
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 6A 5.5A
- Ds Breakdown Voltagemin
- 30V
- Pin Sayısı
- 8
- Terminal Formu
- GULL WING
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 30m Ω @ 6A, 10V
- Fet Type
- N and P-Channel, Common Drain
- Terminal Sayısı
- 8
- Power Dissipation
- 2W
- Gate Charge Qg Max Vgs
- 6.3nC @ 10V
- Number Of Elements
- 2
- Gate To Source Voltage Vgs
- 20V
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