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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 8
- Terminal Formu
- GULL WING
- Montaj Tipi
- Surface Mount
- Fet Feature
- Logic Level Gate
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 18nC @ 10V
- Power Dissipation
- 2W
- Pulsed Drain Currentmax Idm
- 35A
- Number Of Elements
- 2
- Yayın Yılı
- 2010
- Terminal Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 23m Ω @ 7.3A, 10V
- Fet Type
- N and P-Channel
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Max Power Dissipation
- 2W
- RoHS Durumu
- RoHS Compliant
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drain To Source Voltage Vdss
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Pozisyonu
- DUAL
- Parça Durumu
- Obsolete
- Vgsth Max Id
- 2V @ 250μA
- Ambalaj
- Tape & Reel (TR)
- Input Capacitance Ciss Max Vds
- 1100pF @ 10V
- Transistor Application
- SWITCHING
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