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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Drain To Source Voltage Vdss
- 30V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode
- ENHANCEMENT MODE
- Max Power Dissipation
- 2W
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Input Capacitance Ciss Max Vds
- 448pF @ 15V
- Transistor Application
- SWITCHING
- Vgsth Max Id
- 2.6V @ 250μA
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- DUAL
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 18 Weeks
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 8
- Qualification Status
- Not Qualified
- Montaj Tipi
- Surface Mount
- Fet Feature
- Logic Level Gate
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 30V
- Pin Sayısı
- 8
- Terminal Formu
- GULL WING
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 24m Ω @ 7.2A, 10V
- Fet Type
- N and P-Channel
- Terminal Sayısı
- 8
- Gate Charge Qg Max Vgs
- 11nC @ 10V
- Power Dissipation
- 2W
- Number Of Elements
- 2
- Gate To Source Voltage Vgs
- 20V
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