AON7403

Specifications

Fet Type

P-Channel

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

18m Ω @ 8A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

30 V

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

25 V

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

16 Weeks

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Yayın Yılı

2011

Montaj Tipi

Surface Mount

Number Of Elements

1

Vgs Max

±25V

Input Capacitance Ciss Max Vds

1400pF @ 15V

Continuous Drain Current Id

29 A

Max Power Dissipation

3.1 W

Power Dissipation Max

3.1W Ta 25W Tc

Current Continuous Drain Id25

11A Ta 29A Tc

Qualification Status

Not Qualified

Kılıf / Paket

8-PowerVDFN

Schedule B

8541290080

Gate Charge Qg Max Vgs

24nC @ 15V

Input Capacitance

1.4 nF

Rds On Max

18 mΩ

ECCN Kodu

EAR99

Pin Sayısı

8

Terminal Sayısı

5

Vgsth Max Id

3V @ 250μA

Transistor Application

SWITCHING

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Ds Breakdown Voltagemin

30V

Drive Voltage Max Rds On Min Rds On

5V 10V

Maks. Çalışma Sıcaklığı

150 °C

Parça Durumu

Obsolete

Terminal Formu

FLAT

Lifecycle Status

EOL (Last Updated: 4 years ago)